MECHANICS OF A DEFORMABLE SOLIDS

Original article

https://doi.org/10.24866/2227-6858/2025-1/27-42

Fomin D.V., Polyakov A.V., Sholygin I.O., Ryabov I.A.

Dmitriy V. Fomin, Candidate of Physical and Mathematical Sciences, Associate Professor, Director of the REC named after K.E. Tsiolkovsky, Amur State University (Blagoveshchensk, Russian Federation), e-office@yandex.ru, https://orcid.org/0000-0002-5474-5281

Aleksey V. Polyakov, Junior Scientific Assistant, Amur State University (Blagoveshchensk, Russian Federation), polyakov_a_1999@mail.ru, https://orcid.org/0009-0009-5104-5966

Ilya O. Sholygin, Master's Student of 2 years of study, Amur State University (Blagoveshchensk, Russian Federation), ilia.sholygin235@bk.ru

Ilya A. Ryabov, Laboratory Assistant, Amur State University (Blagoveshchensk, Russian Federation), rybovilay@gmail.com

Chemical and epitaxial methods of forming low-dimensional materials

Abstract. The article provides an overview of chemical and epitaxial methods for the formation of low-dimensional silicides. The literature review allowed us to determine which methods are more preferable in the formation of silicides with certain properties. Metal silicides are in demand materials for the production of photoelectric and thermoelectric converters, optical sensors, etc., therefore, they are of great interest to researchers. An analysis of literature sources has shown that laser-induced chemical vapor deposition from the gas phase (LCVD) and LCVD in plasma is effective for producing films of silicides of refractory metals. For the synthesis of films with the structure of nanoscale filaments, chemical deposition from the gas phase in a tubular furnace is the optimal method. The formation of films with a semiconductor conductivity is effectively carried out by applying metal to silicon, followed by evaporation or spraying and heat treatment, as well as the introduction of metal atoms from the metal film deposited on the surface of Si ions of inert gases. For the synthesis of a solid solution including semiconductor metal silicides, the optimal method is direct fusion of elements followed by hot pressing. For the formation of alloyed films of metal compounds with silicon with a poorly developed relief with a given thickness at a stable deposition rate, the method of molecular beam epitaxy is well-proven. Solid-phase and reactive epitaxy are less expensive methods for producing silicide films than those described above.

Keywords: silicides, low-dimensional materials, chemical and epitaxial methods, structural properties

Foundation: AmSU internal grant 2024–2025.

See the reference in English at the end of the article

For citation: Fomin D.V., Polyakov A.V., Sholygin I.O., Ryabov I.A. Chemical and epitaxial methods of forming low-dimensional materials. FEFU: School of Engineering Bulletin, 2025, no. 1(62), pp. 27–42. (In Russ.).