ENGINEERING SCIENCES. Electrical engineering
Drach V.
VLADIMIR E. DRACH, Assistant Professor, EIU1-KF Department, Bauman Moscow State Technical University (Kaluga Branch). Bazhenov, 2, Kaluga, Russia, 248000, e-mail: drach@kaluga.org
Charge pumping technique for MOSFET nanoscale oxide characterisation: physical background and equipment (overview)
The article presents an overview of the charge pumping technique used to examine electrophysical characteristics of the MOSFET gate oxide. The required laboratory equipment and the hardware implementation of the charge pumping technique are discussed in the article. It has been demonstrated that, nowadays, the charge pumping technique has a sufficient accuracy to estimate the charge state of the gate oxide having a nanoscale thickness.
Key words: charge pumping, charge state, border traps, gate oxide, MOSFET
